IXYQ40N65B3D1
IXYS
IXYS
DISC IGBT XPT-GENX3 TO-3P (3)
$7.84
Available to order
Reference Price (USD)
1+
$7.83510
500+
$7.756749
1000+
$7.678398
1500+
$7.600047
2000+
$7.521696
2500+
$7.443345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXYQ40N65B3D1 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXYQ40N65B3D1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXYQ40N65B3D1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 86 A
- Current - Collector Pulsed (Icm): 195 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 300 W
- Switching Energy: 800µJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 68 nC
- Td (on/off) @ 25°C: 20ns/140ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
Rohm Semiconductor
RGWX5TS65HRC11
Infineon Technologies
IHW50N65R6XKSA1
Harris Corporation
HGTH20N50E1D
onsemi
FGB3245G2-F085C
IXYS
IXGT6N170AHV-TRL
Harris Corporation
HGTB12N60D1C
Harris Corporation
HGTH12N50CID
IXYS
IXYR100N65A3V1
Harris Corporation
HGT1S15N120C3S
onsemi