MMIX1X200N60B3
IXYS
IXYS
IGBT 600V 223A 625W SMPD
$38.71
Available to order
Reference Price (USD)
20+
$31.91550
Exquisite packaging
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The MMIX1X200N60B3 Single IGBT transistor by IXYS is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the MMIX1X200N60B3 provides consistent performance in varied conditions. Rely on IXYS's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 223 A
- Current - Collector Pulsed (Icm): 1000 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
- Power - Max: 625 W
- Switching Energy: 2.85mJ (on), 2.9mJ (off)
- Input Type: Standard
- Gate Charge: 315 nC
- Td (on/off) @ 25°C: 48ns/160ns
- Test Condition: 360V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-PowerSMD, 21 Leads
- Supplier Device Package: 24-SMPD
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