NGB8206ANSL3G
onsemi
onsemi
IGBT
$0.67
Available to order
Reference Price (USD)
50+
$1.31260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the NGB8206ANSL3G Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the NGB8206ANSL3G provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose NGB8206ANSL3G for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 390 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
- Power - Max: 150 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -/5µs
- Test Condition: 300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
Related Products
Infineon Technologies
FP50R06KE3GBOSA1
IXYS
IXYX200N65B3
IXYS
IXYQ40N65B3D1
Rohm Semiconductor
RGWX5TS65HRC11
Infineon Technologies
IHW50N65R6XKSA1
Harris Corporation
HGTH20N50E1D
onsemi
FGB3245G2-F085C
IXYS
IXGT6N170AHV-TRL
Harris Corporation
HGTB12N60D1C
Harris Corporation