GSID200A120S5C1
SemiQ
SemiQ
IGBT MODULE 1200V 335A
$0.00
Available to order
Reference Price (USD)
1+
$188.79000
10+
$179.67600
25+
$173.60000
Exquisite packaging
Discount
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Optimize your power systems with SemiQ's GSID200A120S5C1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The GSID200A120S5C1 is particularly effective in high-ambient-temperature environments like steel mill drives. SemiQ brings decades of semiconductor expertise to every GSID200A120S5C1 module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 335 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 22.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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