IXSN55N120A
IXYS
IXYS
IGBT MOD 1200V 110A 500W SOT227B
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The IXSN55N120A from IXYS exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the IXSN55N120A in megawatt-level wind turbine converters. With IXYS's proven track record, the IXSN55N120A represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 500 W
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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