FP50R06KE3BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 60A 190W
$0.00
Available to order
Reference Price (USD)
10+
$74.81000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FP50R06KE3BOSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FP50R06KE3BOSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FP50R06KE3BOSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Power - Max: 190 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Littelfuse Inc.
MG06100S-BR1MM
SemiQ
GSID100A120T2P2
IXYS
IXGN72N60A3
IXYS
IXSN55N120A
Infineon Technologies
2PS13512E43W35222NOSA1
Microsemi Corporation
APTGF300DA120G
Microsemi Corporation
APTGF50DDA120T3G
Powerex Inc.
CM150TX-24S
Vishay General Semiconductor - Diodes Division
CPV363M4K
Powerex Inc.