IXGN72N60A3
IXYS
IXYS
IGBT MOD 600V 160A 360W SOT227B
$0.00
Available to order
Reference Price (USD)
10+
$18.96000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with IXYS's IXGN72N60A3 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The IXGN72N60A3 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the IXGN72N60A3 in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the IXGN72N60A3 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 160 A
- Power - Max: 360 W
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
- Current - Collector Cutoff (Max): 75 µA
- Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
Related Products
IXYS
IXSN55N120A
Infineon Technologies
2PS13512E43W35222NOSA1
Microsemi Corporation
APTGF300DA120G
Microsemi Corporation
APTGF50DDA120T3G
Powerex Inc.
CM150TX-24S
Vishay General Semiconductor - Diodes Division
CPV363M4K
Powerex Inc.
CM150DY-12NF
Powerex Inc.
CM600DY-24A
Littelfuse Inc.
MG1275W-XN2MM
IXYS