HGT1S12N60C3DS
Fairchild Semiconductor
Fairchild Semiconductor
IGBT, 24A, 600V, N-CHANNEL
$1.93
Available to order
Reference Price (USD)
1+
$1.93000
500+
$1.9107
1000+
$1.8914
1500+
$1.8721
2000+
$1.8528
2500+
$1.8335
Exquisite packaging
Discount
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Enhance your electronic projects with the HGT1S12N60C3DS Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the HGT1S12N60C3DS ensures precision and reliability. Fairchild Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose HGT1S12N60C3DS for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Power - Max: 104 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 71 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 32 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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