HGTP20N60C3R
Harris Corporation
Harris Corporation
40A, 600V, RUGGED N-CHANNEL IGBT
$4.53
Available to order
Reference Price (USD)
1+
$4.53000
500+
$4.4847
1000+
$4.4394
1500+
$4.3941
2000+
$4.3488
2500+
$4.3035
Exquisite packaging
Discount
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Upgrade your power management systems with the HGTP20N60C3R Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the HGTP20N60C3R provides reliable and efficient operation. Harris Corporation's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose HGTP20N60C3R for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
- Power - Max: 164 W
- Switching Energy: 500µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 122 nC
- Td (on/off) @ 25°C: 28ns/151ns
- Test Condition: 480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 24 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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