IHW30N110R5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH
$280.82
Available to order
Reference Price (USD)
1+
$280.82000
500+
$278.0118
1000+
$275.2036
1500+
$272.3954
2000+
$269.5872
2500+
$266.779
Exquisite packaging
Discount
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The IHW30N110R5XKSA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IHW30N110R5XKSA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IHW30N110R5XKSA1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
- Power - Max: 330 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 240 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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