HGTG20N60C3R
Harris Corporation
Harris Corporation
40A, 600V, RUGGED N-CHANNEL IGBT
$2.27
Available to order
Reference Price (USD)
1+
$2.27000
500+
$2.2473
1000+
$2.2246
1500+
$2.2019
2000+
$2.1792
2500+
$2.1565
Exquisite packaging
Discount
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Enhance your electronic projects with the HGTG20N60C3R Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the HGTG20N60C3R ensures precision and reliability. Harris Corporation's cutting-edge technology guarantees a component that meets the highest industry standards. Choose HGTG20N60C3R for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 164 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 116 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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