HGTG40N60C3R
Harris Corporation
Harris Corporation
75A, 600V N-CHANNEL IGBT
$7.74
Available to order
Reference Price (USD)
1+
$7.74000
500+
$7.6626
1000+
$7.5852
1500+
$7.5078
2000+
$7.4304
2500+
$7.353
Exquisite packaging
Discount
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The HGTG40N60C3R by Harris Corporation is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the HGTG40N60C3R delivers robust performance. Harris Corporation's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate HGTG40N60C3R into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
- Power - Max: 291 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 330 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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