RBN50H65T1FPQ-A0#CB0
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / IGBT
$5.84
Available to order
Reference Price (USD)
1+
$5.84000
500+
$5.7816
1000+
$5.7232
1500+
$5.6648
2000+
$5.6064
2500+
$5.548
Exquisite packaging
Discount
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The RBN50H65T1FPQ-A0#CB0 Single IGBT transistor by Renesas Electronics America Inc is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RBN50H65T1FPQ-A0#CB0 ensures precise power control and long-term stability. With Renesas Electronics America Inc's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RBN50H65T1FPQ-A0#CB0 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 250 W
- Switching Energy: 830µJ (on), 670µJ (off)
- Input Type: Standard
- Gate Charge: 36 nC
- Td (on/off) @ 25°C: 20ns/93ns
- Test Condition: 400V, 50A, 16Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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