HGTP10N40F1D
Harris Corporation
Harris Corporation
12A, 400V, N-CHANNEL IGBT
$0.88
Available to order
Reference Price (USD)
1+
$0.88000
500+
$0.8712
1000+
$0.8624
1500+
$0.8536
2000+
$0.8448
2500+
$0.836
Exquisite packaging
Discount
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The HGTP10N40F1D by Harris Corporation is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Harris Corporation's reputation for quality, the HGTP10N40F1D is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 5A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 13.4 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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