FGI3040G2-F085C
onsemi
onsemi
ECOSPARK2 IGN-IGBT TO262
$1.43
Available to order
Reference Price (USD)
1+
$1.42849
500+
$1.4142051
1000+
$1.3999202
1500+
$1.3856353
2000+
$1.3713504
2500+
$1.3570655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FGI3040G2-F085C Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the FGI3040G2-F085C ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the FGI3040G2-F085C for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): 41 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
- Power - Max: 150 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: -/ 4.8µs
- Test Condition: 300V, 6.5A, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
Related Products
Harris Corporation
HGTG12N60D1D
Renesas Electronics America Inc
RBN40H125S1FPQ-A0#CB0
IXYS
IXYQ30N65B3D1
Infineon Technologies
IKN03N60RC2ATMA1
STMicroelectronics
STGP20H65FB2
IXYS
IXXH30N65C4D1
Harris Corporation
HGTP20N35F3VL
IXYS
IXYT12N250CV1HV
Harris Corporation
HGTP20N35F3ULR3935
Infineon Technologies