IXYN120N65B3D1
IXYS
IXYS
IGBT MODULE DISC IGBT SOT-227UI
$40.45
Available to order
Reference Price (USD)
1+
$40.44700
500+
$40.04253
1000+
$39.63806
1500+
$39.23359
2000+
$38.82912
2500+
$38.42465
Exquisite packaging
Discount
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Upgrade your power management systems with the IXYN120N65B3D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXYN120N65B3D1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXYN120N65B3D1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 250 A
- Current - Collector Pulsed (Icm): 770 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
- Power - Max: 830 W
- Switching Energy: 1.34mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 250 nC
- Td (on/off) @ 25°C: 30ns/168ns
- Test Condition: 400V, 50A, 2Ohm, 15V
- Reverse Recovery Time (trr): 28 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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