RGW00TS65HRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.85
Available to order
Reference Price (USD)
1+
$6.85000
500+
$6.7815
1000+
$6.713
1500+
$6.6445
2000+
$6.576
2500+
$6.5075
Exquisite packaging
Discount
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The RGW00TS65HRC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGW00TS65HRC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGW00TS65HRC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 96 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 254 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 141 nC
- Td (on/off) @ 25°C: 48ns/186ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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