HGTP20N35F3VL
Harris Corporation
Harris Corporation
20A, 350V, N-CHANNEL IGBT
$1.78
Available to order
Reference Price (USD)
1+
$1.78000
500+
$1.7622
1000+
$1.7444
1500+
$1.7266
2000+
$1.7088
2500+
$1.691
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the HGTP20N35F3VL Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the HGTP20N35F3VL provides reliable and efficient operation. Harris Corporation's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose HGTP20N35F3VL for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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