IXYT12N250CV1HV
IXYS
IXYS
DISC IGBT XPT-HI VOLTAGE TO-268A
$48.10
Available to order
Reference Price (USD)
1+
$48.09733
500+
$47.6163567
1000+
$47.1353834
1500+
$46.6544101
2000+
$46.1734368
2500+
$45.6924635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXYT12N250CV1HV Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXYT12N250CV1HV ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXYT12N250CV1HV into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 2500 V
- Current - Collector (Ic) (Max): 28 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
- Power - Max: 310 W
- Switching Energy: 3.56mJ (on), 1.7mJ (off)
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: 12ns/167ns
- Test Condition: 1250V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr): 16 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268HV (IXYT)
Related Products
Harris Corporation
HGTP20N35F3ULR3935
Infineon Technologies
IKFW50N60ETXKSA1
IXYS
IXA4IF1200UC-TUB
Renesas
RJH60D1DPP-E0#T2
Fairchild Semiconductor
FGR15N40A
IXYS
MMIX1X340N65B4
IXYS
IXYH75N65C3D1
Harris Corporation
HGTG32N60E2
Harris Corporation
IGT6E21
Renesas Electronics America Inc