IHW25N120R2FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 50A 365W TO247-3
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Reference Price (USD)
1+
$4.98000
10+
$4.50500
Exquisite packaging
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The IHW25N120R2FKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IHW25N120R2FKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IHW25N120R2FKSA1 into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
- Power - Max: 365 W
- Switching Energy: 1.59mJ
- Input Type: Standard
- Gate Charge: 60.7 nC
- Td (on/off) @ 25°C: -/324ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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