IKW50N65F5AXKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 80A 305W PG-TO247-3
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Reference Price (USD)
240+
$5.99575
Exquisite packaging
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Enhance your electronic projects with the IKW50N65F5AXKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKW50N65F5AXKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKW50N65F5AXKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 490µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: 108 nC
- Td (on/off) @ 25°C: 21ns/156ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): 77 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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