IHW50N65R6XKSA1
Infineon Technologies
Infineon Technologies
HOME APPLIANCES 14 PG-TO247-3
$4.21
Available to order
Reference Price (USD)
1+
$4.21000
500+
$4.1679
1000+
$4.1258
1500+
$4.0837
2000+
$4.0416
2500+
$3.9995
Exquisite packaging
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The IHW50N65R6XKSA1 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the IHW50N65R6XKSA1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
- Power - Max: 251 W
- Switching Energy: 1.5mJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 199 nC
- Td (on/off) @ 25°C: 21ns/261ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 108 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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