IXGR32N170AH1
IXYS
IXYS
IGBT 1700V 26A 200W ISOPLUS247
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Upgrade your power management systems with the IXGR32N170AH1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGR32N170AH1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGR32N170AH1 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 26 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 21A
- Power - Max: 200 W
- Switching Energy: 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 155 nC
- Td (on/off) @ 25°C: 46ns/260ns
- Test Condition: 1360V, 21A, 2.7Ohm, 15V
- Reverse Recovery Time (trr): 230 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
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