IPZ65R019C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 75A TO247-4
$30.80
Available to order
Reference Price (USD)
1+
$24.95000
10+
$23.22900
240+
$20.12792
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPZ65R019C7XKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPZ65R019C7XKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.92mA
- Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
Related Products
Diodes Incorporated
DMP2100U-7
Vishay Siliconix
SUM85N15-19-E3
Infineon Technologies
IPB240N03S4LR9ATMA1
Panjit International Inc.
PJQ4404P-AU_R2_000A1
Panjit International Inc.
PJD35P03_L2_00001
Vishay Siliconix
SIHP28N65E-GE3
Texas Instruments
CSD22205L
IXYS
IXTK120N25P
Torex Semiconductor Ltd
XP232N0301TR-G
Nexperia USA Inc.