IRG5K75HH06E
Infineon Technologies
Infineon Technologies
IGBT MOD 600V 140A POWIR ECO 2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the IRG5K75HH06E IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The IRG5K75HH06E finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the IRG5K75HH06E.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 140 A
- Power - Max: 330 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR ECO 2™ Module
- Supplier Device Package: POWIR ECO 2™
Related Products
Microsemi Corporation
APTGF25H120T2G
Microsemi Corporation
APTGF100SK120TG
Infineon Technologies
BSM300GB60DLCE3256HDLA1
Infineon Technologies
FP10R06KL4BOMA1
Infineon Technologies
IRG7T300HF12B
Microsemi Corporation
APTGT150A120D1G
Infineon Technologies
BSM300GB60DLCHOSA1
IXYS
VIO130-06P1
Microsemi Corporation
APTGT50SK170D1G
IXYS