IRGR3B60KD2PBF
Infineon Technologies
Infineon Technologies
IGBT 600V 7.8A 52W DPAK
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The IRGR3B60KD2PBF Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IRGR3B60KD2PBF ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IRGR3B60KD2PBF into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 7.8 A
- Current - Collector Pulsed (Icm): 15.6 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
- Power - Max: 52 W
- Switching Energy: 62µJ (on), 39µJ (off)
- Input Type: Standard
- Gate Charge: 13 nC
- Td (on/off) @ 25°C: 18ns/110ns
- Test Condition: 400V, 3A, 100Ohm, 15V
- Reverse Recovery Time (trr): 77 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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