IXGR60N60C3C1
IXYS
IXYS
IGBT 600V 75A 170W ISOPLUS247
$0.00
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Reference Price (USD)
30+
$26.40000
Exquisite packaging
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Optimize your power systems with the IXGR60N60C3C1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXGR60N60C3C1 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 260 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Power - Max: 170 W
- Switching Energy: 830µJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 115 nC
- Td (on/off) @ 25°C: 24ns/70ns
- Test Condition: 480V, 40A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
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