MG1275S-BA1MM
Littelfuse Inc.
Littelfuse Inc.
IGBT MODULE 1200V 105A 630W S3
$0.00
Available to order
Reference Price (USD)
1+
$70.27000
10+
$66.43200
25+
$62.59200
Exquisite packaging
Discount
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Littelfuse Inc.'s MG1275S-BA1MM stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the MG1275S-BA1MM enables higher power density in MRI gradient amplifiers. Choose Littelfuse Inc. for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 105 A
- Power - Max: 630 W
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A (Typ)
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: S-3 Module
- Supplier Device Package: S3
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