RGSX5TS65EHRC11
Rohm Semiconductor
Rohm Semiconductor
8S SHORT-CIRCUIT TOLERANCE, 650V
$11.75
Available to order
Reference Price (USD)
1+
$11.75000
500+
$11.6325
1000+
$11.515
1500+
$11.3975
2000+
$11.28
2500+
$11.1625
Exquisite packaging
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Enhance your electronic projects with the RGSX5TS65EHRC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RGSX5TS65EHRC11 ensures precision and reliability. Rohm Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RGSX5TS65EHRC11 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 114 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Power - Max: 404 W
- Switching Energy: 3.44mJ (on), 1.9mJ (off)
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 43ns/113ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 116 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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