SGP15N120XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 30A 198W TO220-3
$4.41
Available to order
Reference Price (USD)
500+
$3.32808
Exquisite packaging
Discount
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Upgrade your power management systems with the SGP15N120XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the SGP15N120XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose SGP15N120XKSA1 for your critical power needs.
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 52 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
- Power - Max: 198 W
- Switching Energy: 1.9mJ
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: 18ns/580ns
- Test Condition: 800V, 15A, 33Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
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