RGWSX2TS65GC13
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.84
Available to order
Reference Price (USD)
1+
$6.84000
500+
$6.7716
1000+
$6.7032
1500+
$6.6348
2000+
$6.5664
2500+
$6.498
Exquisite packaging
Discount
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Experience top-tier performance with the RGWSX2TS65GC13 Single IGBT transistor from Rohm Semiconductor. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the RGWSX2TS65GC13 ensures energy efficiency and reliability. Trust Rohm Semiconductor's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 104 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 288 W
- Switching Energy: 1.43mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 140 nC
- Td (on/off) @ 25°C: 55ns/180ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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