IHW25N120E1XKSA1
Infineon Technologies
Infineon Technologies
IGBT NPT/TRENCH 1200V 50A TO247
$4.03
Available to order
Reference Price (USD)
1+
$4.48000
10+
$4.04600
240+
$3.36654
720+
$2.90839
1,200+
$2.49763
Exquisite packaging
Discount
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The IHW25N120E1XKSA1 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the IHW25N120E1XKSA1 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
- Power - Max: 231 W
- Switching Energy: 800µJ (off)
- Input Type: Standard
- Gate Charge: 147 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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