IGP50N60TXKSA1
Infineon Technologies
Infineon Technologies
IGBT 600V 100A 333W TO220-3
$5.17
Available to order
Reference Price (USD)
500+
$2.87404
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IGP50N60TXKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGP50N60TXKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGP50N60TXKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 333 W
- Switching Energy: 2.6mJ
- Input Type: Standard
- Gate Charge: 310 nC
- Td (on/off) @ 25°C: 26ns/299ns
- Test Condition: 400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
Related Products
STMicroelectronics
STGD4M65DF2
STMicroelectronics
STGP6M65DF2
Harris Corporation
HGT1S20N60C3R
Microchip Technology
APT36GA60SD15
onsemi
FGH20N60SFDTU
Infineon Technologies
IGW50N65H5AXKSA1
Infineon Technologies
AIKW75N60CTXKSA1
Diodes Incorporated
DGTD120T25S1PT
Infineon Technologies
IGP40N65F5XKSA1
Alpha & Omega Semiconductor Inc.