RGTH50TS65GC13
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V
$5.03
Available to order
Reference Price (USD)
1+
$5.03000
500+
$4.9797
1000+
$4.9294
1500+
$4.8791
2000+
$4.8288
2500+
$4.7785
Exquisite packaging
Discount
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Discover the RGTH50TS65GC13 Single IGBT transistor by Rohm Semiconductor, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the RGTH50TS65GC13 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the RGTH50TS65GC13 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Power - Max: 174 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 49 nC
- Td (on/off) @ 25°C: 27ns/94ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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