STGP6M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$1.68
Available to order
Reference Price (USD)
1+
$1.18000
10+
$1.05300
100+
$0.82110
500+
$0.67830
2,000+
$0.49980
6,000+
$0.47600
Exquisite packaging
Discount
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The STGP6M65DF2 from STMicroelectronics is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose STGP6M65DF2 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 88 W
- Switching Energy: 40µJ (on), 136µJ (off)
- Input Type: Standard
- Gate Charge: 21.2 nC
- Td (on/off) @ 25°C: 12ns/86ns
- Test Condition: 400V, 6A, 22Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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