VS-EMF050J60U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 88A 338W EMIPAK2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the VS-EMF050J60U IGBT module by Vishay General Semiconductor - Diodes Division sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The VS-EMF050J60U finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Vishay General Semiconductor - Diodes Division continues to lead the IGBT module revolution with innovations like the VS-EMF050J60U.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 88 A
- Power - Max: 338 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK2
- Supplier Device Package: EMIPAK2
Related Products
Microsemi Corporation
APTGT30DA170T1G
Vishay General Semiconductor - Diodes Division
50MT060ULS
IXYS
MIXA10WB1200TML
IXYS
MKI75-06A7
Powerex Inc.
CM50TF-28H
Microchip Technology
CMLRGLQ80V601AMXG-AS
Microsemi Corporation
APTGF300DU120G
Microsemi Corporation
APTGT30H60T3G
IXYS
MIAA10WE600TMH
Vishay General Semiconductor - Diodes Division