F3L300R12MT4_B22
Infineon Technologies
Infineon Technologies
F3L300R12 - IGBT MODULE
$188.54
Available to order
Reference Price (USD)
1+
$188.54000
500+
$186.6546
1000+
$184.7692
1500+
$182.8838
2000+
$180.9984
2500+
$179.113
Exquisite packaging
Discount
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Optimize your power systems with the F3L300R12MT4_B22 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the F3L300R12MT4_B22 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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