IXYQ30N65B3D1
IXYS
IXYS
DISC IGBT XPT-GENX3 TO-3P (3)
$6.24
Available to order
Reference Price (USD)
1+
$6.23600
500+
$6.17364
1000+
$6.11128
1500+
$6.04892
2000+
$5.98656
2500+
$5.9242
Exquisite packaging
Discount
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Enhance your electronic projects with the IXYQ30N65B3D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXYQ30N65B3D1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXYQ30N65B3D1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 270 W
- Switching Energy: 830µJ (on), 640µJ (off)
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 17ns/87ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 38 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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