HGTG12N60D1D
Harris Corporation
Harris Corporation
UFS SERIES N-CHANNEL IGBT
$6.32
Available to order
Reference Price (USD)
1+
$6.32000
500+
$6.2568
1000+
$6.1936
1500+
$6.1304
2000+
$6.0672
2500+
$6.004
Exquisite packaging
Discount
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Optimize your power systems with the HGTG12N60D1D Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the HGTG12N60D1D delivers consistent and reliable operation. Trust Harris Corporation's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 21 A
- Current - Collector Pulsed (Icm): 48 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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