VS-GB75NA60UF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 109A 447W SOT227
$0.00
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Reference Price (USD)
160+
$27.16344
Exquisite packaging
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Discover the power of Vishay General Semiconductor - Diodes Division's VS-GB75NA60UF, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The VS-GB75NA60UF performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Vishay General Semiconductor - Diodes Division's VS-GB75NA60UF, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 109 A
- Power - Max: 447 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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