APTGF50VDA120T3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 70A 312W SP3
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The APTGF50VDA120T3G from Microsemi Corporation exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the APTGF50VDA120T3G in megawatt-level wind turbine converters. With Microsemi Corporation's proven track record, the APTGF50VDA120T3G represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Dual Boost Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 312 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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