GSID600A120S4B1
SemiQ
SemiQ
IGBT MOD 1200V 1130A 3060W
$0.00
Available to order
Reference Price (USD)
4+
$167.23250
Exquisite packaging
Discount
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Engineered for excellence, the GSID600A120S4B1 IGBT module by SemiQ sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The GSID600A120S4B1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. SemiQ continues to lead the IGBT module revolution with innovations like the GSID600A120S4B1.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 1130 A
- Power - Max: 3060 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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