MG1215H-XBN2MM
Littelfuse Inc.
Littelfuse Inc.
IGBT MOD 1200V 25A 105W
$0.00
Available to order
Reference Price (USD)
80+
$65.51100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MG1215H-XBN2MM by Littelfuse Inc. redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the MG1215H-XBN2MM in high-efficiency servo controllers for manufacturing automation. Littelfuse Inc. combines innovation with quality in every MG1215H-XBN2MM module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Power - Max: 105 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Littelfuse Inc.
MG1275S-BA1MM
Infineon Technologies
6MS24017E33W32859NOSA1
Microsemi Corporation
APTGF150DA120TG
Vishay General Semiconductor - Diodes Division
VS-GA100NA60UP
Vishay General Semiconductor - Diodes Division
CPV364M4U
Infineon Technologies
6MS24017E33W32274NOSA1
IXYS
IXSN80N60BD1
Microchip Technology
APT60GT60JRDQ3
Infineon Technologies
6MS24017E33W32860NOSA1
Infineon Technologies