RGW00TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$8.26
Available to order
Reference Price (USD)
1+
$8.26000
500+
$8.1774
1000+
$8.0948
1500+
$8.0122
2000+
$7.9296
2500+
$7.847
Exquisite packaging
Discount
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Enhance your electronic projects with the RGW00TS65DHRC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RGW00TS65DHRC11 ensures precision and reliability. Rohm Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RGW00TS65DHRC11 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 96 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 254 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 141 nC
- Td (on/off) @ 25°C: 48ns/186ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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