HGTP6N40E1D
Harris Corporation
Harris Corporation
7.5A, 400V, N-CHANNEL IGBT
$0.66
Available to order
Reference Price (USD)
1+
$0.66000
500+
$0.6534
1000+
$0.6468
1500+
$0.6402
2000+
$0.6336
2500+
$0.627
Exquisite packaging
Discount
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The HGTP6N40E1D Single IGBT transistor by Harris Corporation is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the HGTP6N40E1D provides consistent performance in varied conditions. Rely on Harris Corporation's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): 7.5 A
- Current - Collector Pulsed (Icm): 7.5 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 3A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 6.9 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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