IKN03N60RC2ATMA1
Infineon Technologies
Infineon Technologies
HOME APPLIANCES 14 PG-SOT223-3
$0.87
Available to order
Reference Price (USD)
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$0.87000
500+
$0.8613
1000+
$0.8526
1500+
$0.8439
2000+
$0.8352
2500+
$0.8265
Exquisite packaging
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The IKN03N60RC2ATMA1 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the IKN03N60RC2ATMA1 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 5.7 A
- Current - Collector Pulsed (Icm): 9 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
- Power - Max: 6.3 W
- Switching Energy: 62µJ (on), 44µJ (off)
- Input Type: Standard
- Gate Charge: 18 nC
- Td (on/off) @ 25°C: 7ns/77.5ns
- Test Condition: 400V, 3A, 49Ohm, 15V
- Reverse Recovery Time (trr): 38 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-3
- Supplier Device Package: PG-SOT223-3-1
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