IXXH30N65C4D1
IXYS
IXYS
IGBT
$4.56
Available to order
Reference Price (USD)
30+
$4.48867
Exquisite packaging
Discount
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The IXXH30N65C4D1 by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXXH30N65C4D1 delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXXH30N65C4D1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 62 A
- Current - Collector Pulsed (Icm): 136 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 230 W
- Switching Energy: 1.1mJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 47 nC
- Td (on/off) @ 25°C: 20ns/140ns
- Test Condition: 400V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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