NTD32N06-1G
onsemi
         
                
                                onsemi                            
                        
                                MOSFET N-CH 60V 32A IPAK                            
                        $0.25
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.25000
                                        500+
                                            $0.2475
                                        1000+
                                            $0.245
                                        1500+
                                            $0.2425
                                        2000+
                                            $0.24
                                        2500+
                                            $0.2375
                                        Exquisite packaging
                            Discount
                            TT / Paypal / Credit Card / Western Union / Money Gram
                            
                    Optimize your power electronics with the NTD32N06-1G single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTD32N06-1G combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.                
            Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    